Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.
Identifieur interne : 000857 ( Main/Exploration ); précédent : 000856; suivant : 000858Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.
Auteurs : RBID : pubmed:23331856Abstract
Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.
DOI: 10.1186/1556-276X-8-36
PubMed: 23331856
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.</title><author><name sortKey="Younis, Adnan" uniqKey="Younis A">Adnan Younis</name><affiliation wicri:level="1"><nlm:affiliation>School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, 2052, Australia. d.chu@unsw.edu.au.</nlm:affiliation><country xml:lang="fr">Australie</country><wicri:regionArea>School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, 2052</wicri:regionArea></affiliation></author><author><name sortKey="Chu, Dewei" uniqKey="Chu D">Dewei Chu</name></author><author><name sortKey="Lin, Xi" uniqKey="Lin X">Xi Lin</name></author><author><name sortKey="Lee, Jiunn" uniqKey="Lee J">Jiunn Lee</name></author><author><name sortKey="Li, Sean" uniqKey="Li S">Sean Li</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1186/1556-276X-8-36</idno><idno type="RBID">pubmed:23331856</idno><idno type="pmid">23331856</idno><idno type="wicri:Area/Main/Corpus">000841</idno><idno type="wicri:Area/Main/Curation">000841</idno><idno type="wicri:Area/Main/Exploration">000857</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23331856</PMID><DateCreated><Year>2013</Year><Month>02</Month><Day>06</Day></DateCreated><DateCompleted><Year>2013</Year><Month>02</Month><Day>07</Day></DateCompleted><DateRevised><Year>2013</Year><Month>04</Month><Day>11</Day></DateRevised><Article PubModel="Electronic"><Journal><ISSN IssnType="Print">1931-7573</ISSN><JournalIssue CitedMedium="Print"><Volume>8</Volume><Issue>1</Issue><PubDate><Year>2013</Year></PubDate></JournalIssue><Title>Nanoscale research letters</Title><ISOAbbreviation>Nanoscale Res Lett</ISOAbbreviation></Journal><ArticleTitle>Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.</ArticleTitle><Pagination><MedlinePgn>36</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1186/1556-276X-8-36</ELocationID><Abstract><AbstractText>Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Younis</LastName><ForeName>Adnan</ForeName><Initials>A</Initials><Affiliation>School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, 2052, Australia. d.chu@unsw.edu.au.</Affiliation></Author><Author ValidYN="Y"><LastName>Chu</LastName><ForeName>Dewei</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Lin</LastName><ForeName>Xi</ForeName><Initials>X</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Jiunn</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Li</LastName><ForeName>Sean</ForeName><Initials>S</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>01</Month><Day>19</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nanoscale Res Lett</MedlineTA><NlmUniqueID>101279750</NlmUniqueID><ISSNLinking>1556-276X</ISSNLinking></MedlineJournalInfo><CommentsCorrectionsList><CommentsCorrections RefType="Cites"><RefSource>Nat Mater. 2004 Oct;3(10):703-8</RefSource><PMID Version="1">15359344</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Inorg Chem. 2011 Jul 18;50(14):6482-92</RefSource><PMID Version="1">21671652</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Adv Mater. 2012 Jan 10;24(2):210-28</RefSource><PMID Version="1">21997712</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nano Lett. 2012 May 9;12(5):2559-67</RefSource><PMID Version="1">22494065</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nature. 1997 Jul 3;388(6637):3</RefSource><PMID Version="1">9214483</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nano Lett. 2011 May 11;11(5):2114-8</RefSource><PMID Version="1">21476563</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nano Lett. 2009 Apr;9(4):1636-43</RefSource><PMID Version="1">19271714</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nano Lett. 2009 Apr;9(4):1476-81</RefSource><PMID Version="1">19296606</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nanotechnology. 2009 May 27;20(21):215201</RefSource><PMID Version="1">19423925</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>J Nanosci Nanotechnol. 2010 May;10(5):3676-9</RefSource><PMID Version="1">20359026</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Science. 1989 Dec 15;246(4936):1400-5</RefSource><PMID Version="1">17755995</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nat Mater. 2006 Apr;5(4):312-20</RefSource><PMID Version="1">16565712</PMID></CommentsCorrections></CommentsCorrectionsList><OtherID Source="NLM">PMC3564723</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2012</Year><Month>11</Month><Day>26</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2013</Year><Month>1</Month><Day>14</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>1</Month><Day>19</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>1</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>1</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>1</Month><Day>22</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">1556-276X-8-36</ArticleId><ArticleId IdType="doi">10.1186/1556-276X-8-36</ArticleId><ArticleId IdType="pubmed">23331856</ArticleId><ArticleId IdType="pmc">PMC3564723</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV2/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000857 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000857 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV2
|flux= Main
|étape= Exploration
|type= RBID
|clé= pubmed:23331856
|texte= Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.
}}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i -Sk "pubmed:23331856" \
| HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd \
| NlmPubMed2Wicri -a IndiumV2
| This area was generated with Dilib version V0.5.76. |  |